CIES Consortium
National projectJSPS Core-to-Core Program
Controlled Interfacing of 2D materials for Integrated Device Technology
Coordinator
Tetsuo Endoh
The scaling of the information processing devices using electrons as an information carrier is approaching the physical limitation. The novel materials for opening the breakthrough semiconductor technologies and the integration technologies for manufacturing are strongly needed. The 2D materials such as graphene is expected as not only the new electron channel material which replaces the current MOS channel because of the ultra-high mobility, but also the transport channel material for spins as a new information carrier with ultra-low power consumption. However, since the integration technology to implement such 2D materials into integrated circuits has not been established yet, the application of 2D materials is limited in niche industrial fields. CIES at Tohoku University has been leading the cutting edge technologies for the next generation semiconductor including the vertical body-channel type MOSFET and logic/memory circuit technology using spintronics devices.
The main research objectives in this program are the development of manufacturing technologies with high-level repeatability for 2D electronic materials using CVD technologies, the development of high-quality 2D electron/spin channel with high quality interface between 2D materials and the electrodes/insulators, and theoretical/experimental investigation of 2D electron/spin transport in the channel, with the close collaboration among CIES at Tohoku University (core institute in Japan) Engineering Department at Tohoku University, University of Tokyo (cooperating institute in Japan), University of Tsukuba (cooperating institute in Japan), University of Cambridge (core institute in UK), CNRS/University of Paris Sud (core institute in France), and Hitachi Cambridge Laboratory (cooperating institute in UK). In addition to creating the breakthrough technologies for the next-generation semiconductor integrated devices, with the collaboration among the above world-class research institute, this program also concentrates on fostering young researchers who develop the next generation semiconductor technologies.
