| *12 |
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/ CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability",
J. Magn. Soc. Jpn,V0l. 38, No.2-2, pp.56-60,Mar.20,2014 |
| *11 |
Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Tetsuo Endoh,
" Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell",
Japanese Journal of Applied Physics(JJAP) , Vol. 53, No. 4S, pp. 04ED13 (7pages), March 2014. |
| *10 |
S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
“Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer”,
Journal of Applied Physics, Vol.115, pp.17C719(3pages), February 2014 |
| *9 |
H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno,
“Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs”,
Journal of Applied Physics, Vol. 53, pp.04EM02, February 2014 |
| *8 |
J. H. Jeong, T. Endoh, Y. Kim, W. K. Kim and S. O. Park,
"Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions",
Journal of Applied Physics (JAP), Vol. 115, Issue 17, pp. 17C727 (3pages), February 2014. |
| *7 |
T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches",
Journal of Applied Physics (JAP), Vol. 115, Issue 17, pp. 17C728 (3pages), February 2014. |
| *6 |
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Testuo Endoh,
"Power Reduction by Power Gating in Differential Pair Type STT-MRAMs for Low-Power Nonvolatile Cache Memories",
Japanese Journal of Applied Physics(JJAP) , Vol. 53, No. 4S, pp. 04ED04 (8pages), February 2014. |
| *5 |
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Testuo Endoh,
"A Two-Transistor Bootstrap Type Selective Device for Spin-Transfer-Torque Magnetic Tunnel Junctions",
Japanese Journal of Applied Physics(JJAP) , Vol. 53, No. 4S, pp. 04ED03 (6pages), February 2014. |
| *4 |
Shoun Matsunaga, Akira Mochizuki, Tetsuo Endoh, Hideo Ohno and Takahiro Hanyu,
"Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme",
IEICE Electronics Express, Vol. 11, No. 3, pp. 20131006, February, 2014. |
| *3 |
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions with Perpendicular Easy Axis",
IEEE Transactions on Magnetics, Vol. 49, No. 7, pp. 4437-4440, July, 2013. |
| *2 |
K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno,
"Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance",
Applied Physics Express, Vol. 6, pp. 063002 (1)-(3), May, 2013. |
| *1 |
S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer",
Journal of Applied Physics, Vol. 113, 17C721 (1)-(3), April, 2013. |
